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Wenjie Mai

Wenjie Mai

Thanks for your contribution to our group!

Office: Love Building room 162
Telephone: N/A
Fax: 404-894-9140
Mailing Address: School of Materials Science and Engineering
Georgia Institute of Technology
771 Ferst Dr. N.W.
Atlanta, GA 30332
Biosketch | Research Area | Publications | Highlights | Honors


  • Ph.D. in Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, USA, 2005-2008
  • Master of Science in Physics, Georgia Institute of Technology, Atlanta, GA, USA, 2003-2005.
  • Intern, Institute of Physics, Chinese Academy of Sciences, Beijing, China, 2001-2003.
  • Bachelor of Science in Physics, Peking University, Beijing, China, 1998-2002.

Research Area

  • Participated in the fabrication and characterization project on ZnO superlattice-structured nanohelices, which is published in Science 2005, 309, 1700 & Nano Letters 2006, 6, 2536.
  • Developed new physical and statistical methods to quantify elastic deflection and obtain Young’s modulus of one-dimensional nanowires by atomic force microscope (AFM).
  • Designed, fabricated, and functionalized ZnO nanowire based nanodevices such as field effect transistors (FET), ultraviolet (UV) sensors, gas sensors, and solar cells.
  • Established a manipulation and measurement system in a scanning electron microscope (SEM) chamber for electrical and mechanical measurement on nanomaterials.
  • Investigated the size dependence of the elastic properties of ZnO nanobelts.
  • Optimized growth condition of vertical-aligned ZnO nanowire arrays on SiC and GaN substrates.


  1. "A Statistical Approach to Quantifying the Mechanical Property of Nanomaterials", X.W.Deng, R.S.Vengazhiyil, C.F.Wu, W.J.Mai, and Z.L.Wang, (In preparation).
  2. "Co-doped Y-shape ZnO nanostructures: synthesis, structure and properties", X.M. Zhang, W.J. Mai, Y.Zhang, Y.Ding and Z.L.Wang, (Submitted).

Research Highlights

Honors & Awards